DOC-B-00000689

12 Watt Discrete Power GaN on SiC HEMT

Part # TGF2023-2-02

Production   

Key Features

  • Frequency range: DC to 18 GHz
  • 40.1 dBm nominal Psat at 3 GHz
  • 73.3% maximum PAE
  • 21 dB nominal power gain
  • Bias: Vd = 12 to 32 V, Idq = 50 - 250 mA
  • Technology: 0.25 um Power GaN on SiC
  • Chip dimensions: 0.82 x 0.92 x 0.10 mm
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Description

The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.

The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.

The part is lead-free and RoHS compliant.

Specifications

Frequency (GHz) DC to 18
Linear Gain (dB) 21
P1dB (dBm)
Psat (dBm) 40.1
NF (dB)
PAE (%) 73.3
Voltage (V) 12 to 32
Current (mA) 50 to 250
Package Style  Die
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production