0.1 - 3.0 GHz 10 Watt GaN Power Amplifier

Part # TGA2976-SM


Key Features

  • Frequency range: 0.1-3.0 GHz
  • PSat: >40 dBm @ Pin=27 dBm
  • PAE: 48% (midband)
  • Large signal gain: >13 dB
  • Small signal gain: >20 dB
  • Input return loss: >5 dB
  • Output return loss: >9 dB
  • Bias: Vd = 40 V, Idq = 360 mA, Vg1 = -2.4 V typical, Vg2 = +17.7V typical
  • Wideband flat gain and power
  • Dimensions: 4.0 x 4.0 x 1.64 mm


Qorvo's TGA2976-SM is a wideband cascode amplifier fabricated on Qorvo's production 0.25um GaN on SiC process.  The cascode configuration offers exceptional wideband performance as well as supporting 40V operation.  The TGA2976-SM operates from 0.1 - 3.0 GHz and provides greater than 10 W of saturated output power with greater than 13dB of large signal gain and greater than 38% power-added efficiency.

The TGA29766-SM is available in a low-cost, surface mount 14 lead 4x4 Air Cavity laminate package.  It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare.  The TGA2976-SM is fully matched to 50 ohms at both RF ports allowing for simple system integration.  DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

Lead-free and RoHS compliant.

Evaluation Boards are available upon request.


Frequency (GHz) 0.1 to 3.0
Power (dBm) > 40
Gain (dB) > 20
NF (dB)
PAE (%) 48 (midband)
Voltage (V) 40
IQ (mA) 360
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production