TGA2817-SM
2.9 - 3.5 GHz, 60 Watt S Band GaN Power Amplifier
Key Features
- Frequency range: 2.9 – 3.5 GHz
- Pout: > 48 dBm (at Pin = 24 dBm)
- Large signal gain: > 24 dB (at Pin = 24 dBm)
- PAE: > 54 % (at Pin = 24 dBm)
- Bias: VD = 28 V, IDQ = 200 mA, VG = -2.8 V (typ)
- Package dimensions: 7.00 x 7.00 x 0.85 mm
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Qorvo's TGA2817-SM is a high-power, S-band amplifier covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency.
The TGA2817-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The TGA2817-SM is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems.
Lead-free and RoHS compliant. Evaluation board available on request.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Commercial Radar
- Military Radar
- Wideband Power Amplifiers
Product Categories
Application Categories
| Frequency Min(GHz) | 2.9 |
| Frequency Max(GHz) | 3.5 |
| Pout(dBm) | > 48 |
| Gain(dB) | > 24 |
| PAE(%) | 54 |
| Voltage(V) | 28 |
| Current(mA) | 200 |
| Package Type | QFN |
| Package(mm) | 7.0 x 7.0 x 0.85 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.A |
This product appears in the following application block diagrams: