TGA2590-CP
6 - 12 GHz, 30 Watt GaN Power Amplifier
Key Features
- Frequency range: 6 to 12 GHz
- POUT: > 45 dBm (PIN = 23 dBm)
- PAE: > 30 % (PIN = 23 dBm)
- Small signal gain: 35 dB
- Bias: VD = 20 V (CW), IDQ = 2 A, VG = -2.4 V typ.
- Package dimensions: 15.24 x 15.24 x 3.5 mm
Qorvo's TGA2590-CP is a wideband MMIC power amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGA2590-CP operates from 6-12GHz and provides 30W of saturated output power with >22dB of large signal gain and >30% power-added efficiency.
The TGA2590-CP is offered in a Cu-base package that can either be bolted down or eutectically attached for superior thermal management.
The TGA2590-CP is fully matched to 50 ohm with DC blocking caps at both RF ports allowing for simple system integration. The broadband performance supports both electronic wafers and radar opportunities across defense and commercial markets.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Commercial Radar
- Electronic Warfare
- Military Radar
- Multi-Band VSAT
- Repeaters / Boosters / DAS
- Point-to-Point Radio
Product Categories
Application Categories
| Frequency Min(GHz) | 6 |
| Frequency Max(GHz) | 12 |
| Pout(dBm) | > 45 |
| Gain(dB) | 35 |
| PAE(%) | 30 |
| Voltage(V) | 20 |
| Current(mA) | 2,000 |
| Package Type | Cu Base |
| Package(mm) | 15.24 x 15.24 x 3.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.B.2 |
This product appears in the following application block diagrams: