DOC-E-00000988

5.0 - 6.0 GHz 50 Watt GaN Power Amplifier

Part # TGA2307-SM

Production   

Key Features

  • Frequency range: 5.0 to 6.0 GHz
  • Output power (PIN = 27 dBm): > 47 dBm
  • Power added efficiency (PIN = 27 dBm): > 44.4 %
  • Small signal gain: > 26 dB
  • Input return loss: > 17 dB
  • Large signal gain (PIN = 27 dBm): > 20 dB
  • Bias condition: VD = 28 V, IDQ = 500 mA
  • Pulsed operation
  • Plastic overmold QFN package
  • Package dimensions: 6.00 x 6.00 x 0.85 mm

Description

Qorvo's TGA2307-SM is a packaged power amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 5.0-6.0 GHz, the TGA2307-SM produces greater than 47 dBm of saturated output power with a power-added efficiency greater than 44% and a large signal gain greater than 20 dB.

The TGA2307-SM is offered in a 6 x 6 mm plastic overmold QFN to support low cost board assembly techniques. In addition, the package uses a copper alloy base that offers superior thermal management. With both RF ports fully matched to 50 ohms with integrated DC blocking capacitors, the TGA2307 is ideally suited to support both commercial and military applications.

Lead-free and RoHS compliant.

Evaluation Boards available on request.

Specifications

Frequency (GHz) 5.0 to 6.0
Power (dBm) > 47
Gain (dB) > 26
NF (dB)
PAE (%) > 44.4
Voltage (V) 28
IQ (mA) 0.5
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production