DOC-E-00000895

2-22 GHz GaN Low Noise Amplifier

Part # TGA2227-SM

Production   

Key Features

  • Frequency range: 2 – 22 GHz
  • High input power survivability: 40 dBm
  • Noise figure: 2.0 dB (mid–band)
  • Gain > 15 dB
  • IM3: -36.5 dBc (PIN/tone=-4 dBm, Delta f=10 MHz)
  • P1dB > +22 dBm
  • Bias: VD = +8 V, IDQ = 125 mA
  • Operating drain voltage range: 5 to 15V
  • Package dimensions: 4.0 mm x 4.0 mm x 1.7 mm

Description

The TGA2227–SM is a packaged, low noise amplifier offering high electrical performance, along with exceptional robustness to incident power. Fabricated on Qorvo's 0.15 um GaN on SiC production process (QGaN15), the TGA2227–SM operates over 2–22 GHz and delivers >15 dB small signal gain and >+22 dBm P1dB while supporting 2 dB mid-band Noise Figure.

Robustness to incident power levels of up to 10 Watts is an industry first for a low noise MMIC amplifier and cannot be achieved in competing technologies. This supports potential system cost savings and board area reduction by removal of receive protection circuitry. This would also improve system-level noise figure.

The TGA2227–SM is an ideal choice for radar and EW applications as well as high power communication systems and test and measurement across commercial and military markets.

Lead–Free and RoHS compliant.

Evaluation boards are available upon request.

Specifications

Frequency (GHz) 2 to 22
NF (dB) 2
Gain (dB) 15
Output IP3 (dBm)
P1dB (dBm)
Voltage (V) 8
Current (mA) 125
Package Style 
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production