DOC-E-00000087

0.1 - 3.0 GHz 10 Watt GaN Power Amplifier

Part # TGA2216-SM

Production   

Key Features

  • Frequency range: 0.1-3.0 GHz
  • PSat: > 40dBm @ Pin=27dBm
  • P1dB: > 35dBm
  • PAE: 50% (midband)
  • Large signal gain: > 13dB
  • Small signal gain: 21 dB
  • Input return loss: > 8dB
  • Output return loss: > 11dB
  • Bias: Vd = 40 V, Idq = 360 mA, Vg1 = -2.4 V typical, Vg2 = +17.7V typical
  • Wideband flat gain and power
  • Dimensions: 5.0 x 5.0 x 1.45 mm

Description

TriQuint's TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40V operation. The TGA2216-SM operates from 0.1 - 3.0GHz and provides 10W of saturated output power with greater than 13dB of large signal gain and greater than 40% power-added efficiency.

The TGA2216-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare.The TGA2216-SM is fully matched to 50 ohms at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

Lead-free and RoHS compliant.

Evaluation Boards are available upon request.

Specifications

Frequency (GHz) 0.1 to 3.0
Power (dBm) > 40
Gain (dB) 21
NF (dB)
PAE (%) 50 (midband)
Voltage (V) 40
IQ (mA) 360
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production