DOC-B-00000898

0.1 - 3.0 GHz 12W GaN Power Amplifier

Part # TGA2216

Production   

Key Features

  • Frequency range: 0.1-3.0 GHz
  • PSat: 41dBm @ Pin=27dBm
  • P1dB: >34dBm
  • PAE: >40%
  • Large signal gain: 14dB
  • Small signal gain: 22 dB
  • Return loss: 10dB (midband)
  • IM3 @ 120mA Pout< 33dBm/tone: -30dBc
  • IM5 @ 120mA Pout< 33dBm/tone: -35dBc
  • Bias: Vd = 48 V, Idq = 360 mA, Vg1 = -2.3 V typical, Vg2 = +21.7V typical
  • Wideband flat gain and power
  • Dimensions: 1.8 x 1.8 x 0.10 mm

Description

TriQuint's TGA2216 is a wideband cascode amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 48V operation. The TGA2216 operates from 0.1 - 3.0GHz and provides 12W of saturated output power with 14dB of large signal gain and greater than 40% power-added efficieny.

The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2216 is fully matched to 50 ohms at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

Lead-free and RoHS compliant.

Evaluation Boards are available upon request.

Specifications

Frequency (GHz) 0.1 to 3.0
Power (dBm) 41
Gain (dB) 22
NF (dB)
PAE (%) > 40
Voltage (V) 48
IQ (mA) 360
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production