DOC-E-00000652

2 - 18 GHz 5 Watt GaN Power Amplifier

Part # TGA2214

Production   

Key Features

  • Frequency range: 2 - 18 GHz
  • Pout: 37 dBm at PIN = 23 dBm
  • PAE: 20 % at Pin = 23 dBm
  • Large signal gain (Pin = 23 dBm): 14 dB
  • Small signal gain: 22 dB
  • Return Loss: 7 dB
  • Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V typical
  • Chip dimensions: 2.87 x 4.87 x 0.10 mm
  • Performance under CW operation

Description

Qorvo's TGA2214 is a wideband power amplifier fabricated on Qorvo's TQGaN15 GaN on SiC process. The TGA2214 operates from 2 – 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency . This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost.

The TGA2214 is matched to 50 ohm with integrated DC blocking capacitors on both RF ports simplifying system integration; it is ideally suited for electronic warfare, test instrumentation and radar applications across both military and commercial markets.

Lead free and RoHS compliant.

Evaluation Boards are available upon request.

Specifications

Frequency (GHz) 2 to 18
Power (dBm) 37
Gain (dB) 14
NF (dB)
PAE (%) 20
Voltage (V) 22
IQ (mA) 450
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production