DOC-B-00000914

15W 28V DC-6 GHz GaN RF Power Transistor

Part # T2G6001528-SG

Production   

Key Features

  • Frequency range: DC-6 GHz
  • P3dB: 17W at 3.3 GHz
  • PAE3dB: 72% typical
  • Linear gain: > 15dB at 3.3 GHz
  • Bias: Vd = 28V, Idq = 100mA, Vg = -3.2V typical
  • Dimensions: 5.08 x 7.37 x 2.41 mm
Modelithics

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Description

The TriQuint T2G6001528-SG is a 15W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6.0 GHz. The device is constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

Specifications

Frequency (GHz) DC to 6
Linear Gain (dB) 15.5
P1dB (dBm) 42.3
Psat (dBm)
NF (dB)
PAE (%)
Voltage (V) 28
Current (mA) 100
Package Style 
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production