DOC-B-00000916

55 W, 28 V, DC - 3.5 GHz GaN RF Power Transistor

Part # T2G4005528-FS

Production   

Key Features

  • Frequency: DC to 3.5 GHz
  • Linear Gain: > 15 dB at 3.5 GHz
  • Operating Voltage: 28 V
  • Output Power (P3dB): 55 W at 3.5 GHz
  • Lead-free and RoHS compliant
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Description

The TriQuint T2G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Specifications

Frequency (GHz) DC to 3.5
Linear Gain (dB) 15
P1dB (dBm)
Psat (dBm) 47.2
NF (dB)
PAE (%) > 50
Voltage (V) 28
Current (mA) 200
Package Style  NI-360
RoHS  Yes
Lead Free  Yes

Typical Applications

Additional Information

Status Production