QPD2796
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency range: 2.5-2.7GHz
- Drain voltage: 48V
- Output power (P3dB): 200W
- Maximum drain efficiency: 72%
- Efficiency-Tuned P3dB gain: 20dB
Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.
The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2796 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant
Typical Applications
- Active Antennas
- Micro Cell Base Station
- Macro Cell Base Station
- Wireless Communications
Product Categories
| Frequency Min(MHz) | 2,500 |
| Frequency Max(MHz) | 2,700 |
| Gain(dB) | 23 |
| Psat(dBm) | 53 |
| PAE(%) | 72 |
| Vd(V) | 48 |
| Idq(mA) | 360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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