65 Watt, 50 Volt, DC - 3.7 GHz, GaN RF Power Transistor

Part # QPD1015L


Key Features

  • Frequency range: DC - 3.7GHz
  • Output power (P3dB): 70 W at 2 GHz
  • Linear gain: 20 dB typical at 2 GHz
  • Typical PAE3dB: 74 % at 2 GHz
  • Operating voltage: 50V
  • Low thermal resistance package

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The QPD1015(L) is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail.   The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation.  The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.


Frequency (GHz) DC to 3.7
Linear Gain (dB) 20
P1dB (dBm)
Psat (dBm) 48.5
NF (dB)
PAE (%) 74
Voltage (V) 50
Current (mA) 65
Package Style  NI-360
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production