DOC-E-00001290

65 Watt, 50 Volt, DC - 3.7 GHz, GaN RF Power Transistor

Part # QPD1015L

Production   

Key Features

  • Frequency range: DC - 3.7GHz
  • Output power (P3dB): 70 W at 2 GHz
  • Linear gain: 20 dB typical at 2 GHz
  • Typical PAE3dB: 74 % at 2 GHz
  • Operating voltage: 50V
  • Low thermal resistance package
Modelithics

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Description

The QPD1015(L) is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail.   The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation.  The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Specifications

Frequency (GHz) DC to 3.7
Linear Gain (dB) 20
P1dB (dBm)
Psat (dBm) 48.5
NF (dB)
PAE (%) 74
Voltage (V) 50
Current (mA) 65
Package Style  NI-360
RoHS  Yes
Lead Free  Yes
Halogen Free  Yes

Typical Applications

Additional Information

Status Production