QPA1003D
1 - 8 GHz, 10 Watt GaN Power Amplifier
Key Features
- Frequency range: 1 - 8GHz
- PSAT: 40dBm
- PAE: 30 %
- Small signal gain: 30dB
- Return loss: 11dB
- Bias: VD = 28V, IDQ = 650mA, VG = -2.2V typical
- Chip dimensions: 3.3 x 3.55 x 0.10 mm
| Mouser | 10 | Buy Online > | |
| RELL | 7 | Buy Online > | |
| RFMW | 12 | Buy Online > |
Qorvo's QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). The QPA1003D operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.
The QPA1003D is matched to 50 ohm with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.
The QPA1003D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant. Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Electronic Warfare
- Communication Systems
- Radar
- Test Instrumentation
- Multi-Band VSAT
Product Categories
Application Categories
| Frequency Min(GHz) | 1 |
| Frequency Max(GHz) | 8 |
| Psat(dBm) | 40 |
| Gain(dB) | 30 |
| PAE(%) | 30 |
| Voltage(V) | 28 |
| Current(mA) | 650 |
| Package Type | Die |
| Package(mm) | 3.3 x 3.55 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.b.2.b.1 |
This product appears in the following application block diagrams: