TriQuint offers a broad portfolio of gallium nitride (GaN) discrete transistor products with varying levels of power and frequency ratings, in both die-level and packaged solutions. Our products provide the high performance of GaN plus the convenience of industry-standard packaging, which speeds design and manufacturing—all backed by our industry-leading reliability.

Key Benefits

  • High efficiency and power density
  • Superior gain
  • Ruggedness and ability to operate over a wide bandwidth
  • Record-setting reliability that exceeds previous industry standards
  • Design expertise as a frontrunner in GaN technology

Applications

  • Military and civilian radar
  • Professional and military radio communications
  • Test instrumentation
  • Wideband or narrowband amplifiers
  • Jammers
  • Base station – base transceiver station, repeaters, picocells, macrocell networks, marine radios

Related Resources
GaN For Dummies® Resources from Qorvo

Learn about the basic technology of gallium nitride (GaN) and its applications in
RF design.

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Discrete Transistors

Parametric Search

NF
PAE
    GHz  dB  dBm  dBm  dB  mA   
QPD0030 45 Watt, 48 Volt DC-4 GHz GaN RF Power Transistor DC to 4 22 46.9 72 48 85 QFN
QPD0050 75 Watt, 48 Volt DC-3.6 GHz GaN RF Power Transistor DC to 3.6 22.5 48.7 80 48 130 DFN
QPD0060 90 Watt, DC-3.6 GHz 48 Volt GaN RF Power Transistor DC to 3.6 25 49.5 73 48 150 DFN
QPD1000 15 Watt, 28 Volt, 0.03 - 1.215 GHz, GaN RF Input-Matched Transistor 0.03 to 1.215 19 43.8 78.2 28 50 5 x 6 DFN
QPD1003 500 Watt, 50 Volt, 1.2 - 1.4 GHz, GaN RF IMFET 1.2 to 1.4 19.9 57.3 66.7 50 750 RF-565
QPD1008 125 Watt, 50 Volt, DC - 3.2 GHz, GaN RF Power Transistor DC to 3.2 > 17 52 70 50 260 NI-360
QPD1008L 125 Watt, 50 Volt, DC - 3.2 GHz, GaN RF Power Transistor DC to 3.2 > 17 52 70 50 260 NI-360
QPD1009 15 Watt, 50 Volt, DC - 4 GHz, GaN RF Transistor DC to 4 24 42.3 72 50 26 3mm x 3mm QFN
QPD1010 10 Watt, 50 Volt, DC - 4 GHz, GaN RF Transistor DC to 4 24.7 40.4 70 50 18 3mm x 3mm QFN
QPD1015 65 Watt, 50 Volt, DC - 3.7 GHz, GaN RF Power Transistor DC to 3.7 20 48.5 74 50 65 NI-360
QPD1015L 65 Watt, 50 Volt, DC - 3.7 GHz, GaN RF Power Transistor DC to 3.7 20 48.5 74 50 65 NI-360
QPD1017 450 Watt, 50 Volt, 3.1 - 3.5 GHz, GaN RF IMFET 3.1 to 3.5 16.5 56.6 60 50 750 RF-565
QPD1823 220 Watt, 48 Volt 1.8-2.4 GHz GaN RF Power Transistor 1.8 to 2.4 24 53.6 80 48 360 NI-400
QPD2730 220 Watt, 48 Volt 2.575 - 2.635 GHz Doherty GaN RF Power Transistor 2.575 to 2.635 15.9 53.5 53 48 210 NI-780
QPD2793 200 Watt, 48 Volt 2.62 - 2.69 GHz GaN RF Power Transistor 2.62 to 2.69 23 53 75 48 360 NI-400
QPD2795 360 Watt, 48 Volt 2.5 - 2.7 GHz GaN RF Power Transistor 2.5 to 2.7 22 55.6 72 48 700 NI-780
QPD2796 200 Watt, 48 Volt 2.5-2.7 GHz GaN RF Power Transistor 2.5 to 2.7 23 53 72 48 360 QFN
QPD3601 180 Watt, 50 Volt 3.4 - 3.6 GHz GaN RF Power Transistor 3.4 to 3.6 22 52.6 66 50 420 NI-400
QPD3800 85 Watt, 48 Volt 3.4 – 3.8 GHz GaN RF Power Transistor 3.4 to 3.8 21 49.3 70 50 180 NI-400
T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor DC to 2 19 54.2 54 36 576 NI-780
T1G2028536-FS 285W, 36V DC – 2 GHz, GaN RF Power Transistor DC to 2 19 54.2 54 36 576 NI-780
T1G3000532-SM 5W, 32V, 0.03 - 3.5 GHz, GaN RF Input-Matched Transistor 3. to 3.5 15.7 32 25 QFN
T1G4004532-FL 45W, 32V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 > 19 32 220 flanged
T1G4004532-FS 45W, 32V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 > 19 32 220 flangeless
T1G4012036-FL 120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 16 50.8 52 36 360 NI-360
T1G4012036-FS 120 W Peak, 24 W Average Power, 36 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 16 50.8 52 36 360 NI-360
T1G4020036-FL 2x120W Peak Power, 2x24W Average Power, 36V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 16 36 520
T1G4020036-FS 2x120W Peak Power, 2x24W Average Power, 36V, DC-3.5GHz, GaN RF Power Transistor DC to 3.5 16 36 520
T1G6001032-SM 10 W, 32 V, DC - 6 GHz GaN RF Power Transistor DC to 6 19 40 54 32 50 5 x 5 mm
T2G4003532-FL 30W, 32V, DC-3.5GHz GaN RF Power Transistor DC to 3.5 16.5 44.5 49 32 150 NI-360
T2G4003532-FS 30W, 32V, DC-3.5GHz GaN RF Power Transistor DC to 3.5 16.5 44.5 49 32 150 NI-360
T2G4005528-FS 55 W, 28 V, DC - 3.5 GHz GaN RF Power Transistor DC to 3.5 15 47.2 > 50 28 200 NI-360
T2G6000528-Q3 7 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 15.5 39.5 50 28 50 NI-200
T2G6001528-Q3 18 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 15 42.5 > 50 28 50 NI-200
T2G6001528-SG 15W 28V DC-6 GHz GaN RF Power Transistor DC to 6 15.5 42.3 28 100
T2G6003028-FL 30 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 14 45 50 28 200 NI-200
T2G6003028-FS 30 W, 28 V, DC - 6 GHz GaN RF Power Transistor DC to 6 14 45 50 28 200 NI-200
TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT DC to 18 18 38 71.6 12 to 32 25 to 125 Die
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT DC to 18 21 40.1 73.3 12 to 32 50 to 250 Die
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT DC to 18 18 43 78.3 12 to 32 100 to 500 Die
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT DC to 18 19.8 47.3 69.5 12 to 32 200 to 1,000 Die
TGF2023-2-20 100 Watt Discrete Power GaN on SiC HEMT DC to 18 19.2 50.5 70.5 12 to 32 400 to 2,000 Die
TGF2819-FL 100W Peak Power, 20W Average Power, 32V, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 > 14 32 250
TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 > 14 32 250
TGF2929-FL 100W, 28V, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 > 14 50.3 > 50 28 260 NI-360
TGF2929-FS 100 Watt, 28 Volt, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 > 14 50.3 > 50 28 260 NI-360
TGF2929-HM 100 Watt, 28 Volt, DC - 3.5 GHz, GaN RF Power Transistor DC to 3.5 17.4 51.2 72 28 260 NI-360 Hermetic
TGF2933 DC - 25 GHz, 28 V, 7 W, GaN RF Transistor DC to 25 15 38.6 57 28 80 0.83 x 0.55 x 0.10 mm die
TGF2934 DC - 25 GHz, 28 V, 14 W, GaN RF Transistor DC to 25 14 41.5 49 28 160 1.46 x 0.55 x 0.10 mm die
TGF2935 DC - 25 GHz, 28 V, 5 W, GaN RF Transistor DC to 25 16 36.8 60 28 40 0.60 x 0.55 x 0.10 mm die
TGF2936 DC - 25 GHz, 28 V, 10 W, GaN RF Transistor DC to 25 16 40 58 28 80 0.98 x 0.5 5x 0.10 mm die
TGF2941 DC - 25 GHz, 28 V, 4 W, GaN RF Transistor DC to 25 16 36 60 28 40 0.52 x 0.55 x 0.10 mm die
TGF2942 DC - 25 GHz, 28 V, 2 W, GaN RF Transistor DC to 25 18 33.8 59 28 20 0.41 x 0.55 x 0.10 mm die
TGF2952 7 Watt Discrete Power GaN on SiC HEMT DC to 14 20.4 38.4 75.7 32 25 Die
TGF2953 12 Watt Discrete Power GaN on SiC HEMT DC to 12 18.2 41.2 73.7 32 50 Die
TGF2954 27 Watt Discrete Power GaN on SiC HEMT DC to 12 19.6 44.5 71.6 32 100 Die
TGF2955 40 Watt Discrete Power GaN on SiC HEMT DC to 12 19.2 46.4 69 32 150 Die
TGF2956 55 Watt Discrete Power GaN on SiC HEMT DC to 12 19.3 47.6 69.7 32 200 Die
TGF2957 70 Watt Discrete Power GaN on SiC HEMT DC to 12 19.2 48.6 69.6 32 250 Die
TGF2965-SM 5 Watt, 32 Volt, 0.03 - 3 GHz, GaN RF 50 Ohm Input-Matched Transistor 0.03 to 3 18 37.8 63 32 25 PQFN
TGF2977-SM 5 Watt, 32 Volt, DC - 12 GHz, GaN RF Transistor DC to 12 13 37.8 50 32 25 PQFN
TGF2978-SM 20 Watt, 32 Volt, DC - 12 GHz, GaN RF Transistor DC to 12 11 42.8 46 32 100 PQFN
TGF2979-SM 25 Watt, 32 Volt, DC - 12 GHz, GaN RF Transistor DC to 12 11 43.4 45 32 150 PQFN
TGF3015-SM 10W, 32V, 0.03 - 3.0 GHz, GaN RF Input-Matched Transistor 0.03 to 3.0 17.1 at 2.4 GHz 40.4 62.7 at 2.4 GHz 32 50 QFN
TGF3020-SM 5 W, 32 V, 4 - 6 GHz, GaN RF 50 Ohm Input-Matched Transistor 4 to 6 12.7 38.3 59.6 @ 5GHz 32 25 PQFN
TGF3021-SM 30 Watt, 32 Volt, 0.03 - 4.0 GHz, GaN RF Transistor 0.03 to 4.0 19.3 32 65 3x4 mm QFN
TQP0102 5 Watt, DC - 4 GHz GaN Power Transistor DC to 4 > 19 37 64 32 25 3 x 3 mm 16-Pin QFN
TQP0103 15 Watt, DC - 4 GHz GaN Power Transistor DC to 4 > 19 43.5 63 32 70 3 x 4 mm QFN
TQP0104 30 Watt, DC - 4 GHz GaN Power Transistor DC to 4 17 44.6 60 32 70 3 x 4 mm