TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13 µm pHEMT and 0.25 µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.

Key Benefits

  • Ultra-low noise
  • Design flexibility

Applications

  • Base station
  • Defense communications
  • High-performance receivers

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Discrete Transistors

Parametric Search

NF
PAE
    GHz  dB  dBm  dBm  dB  mA   
TGA2601-SM 800 - 3000 MHz High IP3 Dual pHEMT 0.8 to 3 19 to 24 23 0.7 4 100 4 x 4 mm
TGA2602-SM Dual GaAs pHEMT 0.8 to 3 20.5 20 0.55 4 100 2 x 2 mm
TGF2018 180 um Discrete GaAs pHEMT DC to 20 14 22 1 55 8 29 Die
TGF2021-01 X Band Discrete Power pHEMT DC to 12 11 > 30 59 8 to 12 75 to 125 Die
TGF2021-02 X Band Discrete Power pHEMT DC to 12 11 > 33 59 8 to 12 150 to 250 Die
TGF2021-04 X Band Discrete Power pHEMT DC to 12 11 > 36 59 8 to 12 300 to 500 Die
TGF2021-12 X Band Discrete Power pHEMT DC to 12 11 > 42 58 8 to 12 900 to 1,500 Die
TGF2022-06 Ku Band Discrete Power pHEMT DC to 20 13 > 28 58 8 to 12 45 to 75 Die
TGF2022-12 Ku Band Discrete Power pHEMT DC to 20 13 > 31 58 8 to 12 90 to 150 Die
TGF2022-24 Ku Band Discrete Power pHEMT DC to 20 13 > 34 58 8 to 12 180 to 300 Die
TGF2022-48 Ku Band Discrete Power pHEMT DC to 20 13 > 37 58 8 to 12 360 to 600 Die
TGF2022-60 Ku Band Discrete Power pHEMT DC to 20 12 > 38 57 8 to 12 448 to 752 Die
TGF2025 250 um Discrete GaAs pHEMT DC to 20 14 25 0.9 58 8 41 Die
TGF2040 400 um Discrete GaAs pHEMT DC to 20 13 26 1.1 55 8 65 Die
TGF2060 600 um Discrete GaAs pHEMT DC to 20 12 28 1.4 55 8 97 Die
TGF2080 800 um Discrete GaAs pHEMT DC to 20 11.5 29.5 56 8 129 Die
TGF2120 1200 um Discrete GaAs pHEMT DC to 20 11 31 57 8 194 Die
TGF2160 1600 um Discrete GaAs pHEMT DC to 20 10.4 32.5 63 8 258 Die
TGF4350 0.3 mm, 0.25-µm mmW pHEMT 2MI DC to 22 13 @ 10 GHz 16 0.8 @ 10 GHz 3 15 Die
TQP3M6004 700 - 915 MHz High IP3 Dual pHEMT Low Noise Amplifier 0.7 to 0.915 20.5 20.7 0.32 4 70 4 x 4 mm
TQP3M6005 1700 - 2000 MHz High IP3 Dual pHEMT Low Noise Amplifier 1.7 to 2 17.9 21.6 0.36 4.5 50 4 x 4 mm 16-pin SMT

Low Noise Amplifiers

Parametric Search

NF
    GHz  dB  dB  dBm  dBm  mA   
TQL9066 0.05-1.5 GHz High IP3 Dual E-pHEMT LNA 0.05 to 1.5 0.62 18.4 40 21.4 4.35 55 4x4 mm QFN
TQP3M9039 High IP3 Dual E-PHEMT Low Noise Amplifier 0.05 to 1.5 0.6 18 38.8 21.5 4.35 57 4 x 4 mm
TQP3M9040 High IP3 Dual E-PHEMT Low Noise Amplifier 1.5 to 2.3 0.67 18 40 21.8 4.35 57 4 x 4 mm
TQP3M9041 High IP3 Dual E-PHEMT Low Noise Amplifier 2.3 to 6 0.80 18 38 22.5 4.35 57 4 x 4 mm