TriQuint offers die-level and packaged gallium arsenide (GaAs) HFETs with various power levels to cover frequencies from DC to 12 GHz. Designed for use in both RF modules and discrete solutions, our devices conform to TriQuint's long history of producing highly reliable, high-quality components. Our GaAs HFETs are targeted for use in wireless infrastructure and communications that demand high performance and high efficiency.

Key Benefits

  • High power added efficiency (PAE)
  • High gain
  • Small form factor


  • Base station
  • Wireless communications – VSAT, point-to-point radio, military
  • Space

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