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TriQuint is proud to announce the latest additions to our innovative RF portfolio. View our New Products page to discover ways to simplify your RF designs across mobile, network infrastructure and defense applications.
TriQuint's LowDrift™ and NoDrift™ filter technologies dramatically reduce temperature sensitivity for fewer dropped calls and a better user experience.
TriQuint's QUANTUM Tx™ family of highly integrated transmit modules reduce board space and enable a much smaller footprint for 2G / 3G / 4G mobile devices. Find out how these building blocks can make RF design easier and faster for 2G and entry-level 3G devices.
Patented Spatium™ technology from TriQuint delivers a higher standard of efficiency, reliability and frequency range for high-power RF applications including communications, electronic warfare (EW), radar and test and measurement.
TriQuint's innovative TriAccess™ portfolio enables more efficient broadband video, voice and data services. TriQuint amplifiers and filters lower power consumption with improved performance. TriQuint enables all major 75 ohm RF systems in headend, infrastructure, MDU and CPE applications.
Consumers have come to expect Wi-Fi connectivity in their smartphones, tablets and other mobile devices. You'll find TriQuint's TriConnect® Wi-Fi RF modules in many of the world's most sought-after products.
TRITIUM™ is a family of highly integrated modules designed for use in 3G mobile phones, data cards and USB modems. Optimize your 3G CDMA / WCDMA / HSUPA applications and gain maximum design flexibility.
TriQuint's highly integrated TRIUMF™ MMPAs are one more proven way that TriQuint engineers are delivering innovative solutions for the most complex mobile design challenges for cutting-edge smartphones. Let us help you simplify your 2G / 3G / 4G design and enhance system performance while speeding time to market.
HILLSBORO, OREGON & RICHARDSON, TEXAS (USA) - April 30, 2013 - TriQuint Semiconductor, Inc.(NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, today announced that it has produced the industry's first gallium nitride (GaN) transistors using GaN-on-diamond wafers that substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint's breakthrough technology enables new generations of RF amplifiers up to three times smaller or up to three times the power of today's GaN solutions.
TriQuint received a Compound Semiconductor Industry Award in March commending its new GaN-on-diamond achievements. TriQuint's James L. Klein, Vice President and General Manager for Infrastructure and Defense Products, remarked that unlocking the true potential of high-efficiency GaN circuits will depend on achievements like those of TriQuint's advanced research and development program.
Operating temperature largely determines high performance semiconductor reliability. It's especially critical for GaN devices that are capable of very high power densities. "By increasing the thermal conductivity and reducing device temperature, we are enabling new generations of GaN devices that may be much smaller than today's products. This gives significant RF design and operational benefits for our commercial and defense customers," he said.
TriQuint demonstrated its new GaN-on-diamond, high electron mobility transistors (HEMT) in conjunction with partners at the University of Bristol, Group4 Labs and Lockheed Martin under the Defense Advanced Research Projects Agency's (DARPA) Near Junction Thermal Transport (NJTT) program.
NJTT is the first initiative in DARPA's new 'Embedded Cooling' program that includes the ICECool Fundamentals and ICECool Applications research and development engagements. NJTT focuses on device thermal resistance 'near the junction' of the transistor. Thermal resistance inside device structures can be responsible for more than 50% of normal operational temperature increases. TriQuint research has shown that GaN RF devices can operate at a much higher power density and in smaller sizes, through its highly effective thermal management techniques.
TriQuint's New GaN Achievement in Detail
TriQuint's breakthrough involves the successful transfer of a semiconductor epitaxial overlay onto a synthetic diamond substrate, providing a high thermal conductivity and low thermal boundary resistance, while preserving critical GaN crystalline layers. This achievement is the first to demonstrate the feasibility of GaN-on-diamond HEMT devices. Results to date indicate TriQuint achieved the primary NJTT goal of a three-fold improvement in heat dissipation while preserving RF functionality; this achievement supports reducing power amplifier size or increasing output power by a factor of three. Additional fabrication improvements and extensive device testing are underway to optimize the epitaxial layer transfer process and fully characterize enhancements that can be achieved in these new HEMT devices.
Army Research Laboratory (ARL) Cooperative Research and Development Agreement (CRADA) to jointly develop advanced GaN circuits
For more information about TriQuint defense / aerospace products and foundry services, including GaN-based amplifiers, transistors, high-power switches and integrated assembly capabilities, visit us at www.triquint.com/applications/defense, or register to receive product updates and TriQuint’s newsletter.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading supplier’, or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint’s operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other “Risk Factors” set forth in TriQuint’s most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements.
FACTS ABOUT TRIQUINT
Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world's top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry's broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com.
TriQuint: Reach Further, Reach Faster™
Distribution Statement “A” (Approved for Public Release, Distribution Unlimited)
TriQuint Media Contact: Mark W. Andrews
Strategic Marketing Communications Mgr.
TriQuint Semiconductor, Inc.
Tel: +1 (407) 884-3404
Mobile : +1 (407) 353-8727
Infrastructure and Defense Products: Douglas H. Reep, PhD,
Research Sr. Director
TriQuint Semiconductor, Inc.
Tel: +1 972 994 8323